Grown-in defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition under different growth conditions.
In: Applied Physics Letters, Jg. 47 (1985-12-01), Heft 11, S. 1180-1182
Online
academicJournal
Zugriff:
Studies of the grown-in defects in multi-epilayer GaAs (with/without a buffer layer) grown by metalorganic chemical vapor deposition under different [AsH3]/[TMGa] ratios, growth temperatures, and growth rates have been made in this letter by the deep level transient spectroscopy method. For samples without a buffer layer, two electron traps with activation energies of Ec-0.83 eV (EL2a) and Ec-0.74 eV are observed, whereas for samples with 6-μm-thick buffer layers, only EL2a level is found. The concentration of the deep level traps is found closely related to the [AsH3]/[TMGa] ratio, the growth temperature, and the growth rate (mainly at lower growth rate). The results show that, for samples without a buffer layer, the background dopant density profile is closely related to the deep level trap density profile in the epilayers, whereas for samples with a buffer layer, the profile of background dopant density is less influenced by the presence of the deep level trap. [ABSTRACT FROM AUTHOR]
Titel: |
Grown-in defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition under different growth conditions.
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Autor/in / Beteiligte Person: | Li, Sheng S. ; Lee, D. H. ; Choi, C. G. ; Andrews, J. E. |
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Zeitschrift: | Applied Physics Letters, Jg. 47 (1985-12-01), Heft 11, S. 1180-1182 |
Veröffentlichung: | 1985 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.96319 |
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