Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP.
In: Applied Physics Letters, Jg. 46 (1985), Heft 1, S. 89-91
Online
academicJournal
Zugriff:
GaInAs grown on InP at atmospheric pressure using organometallic vapor phase epitaxy is characterized by x-ray diffraction, transmission electron microscopy (TEM), and Hall measurements. The sources used are TMIn, TMGa, AsH3, and PH3 in a carrier gas of H2. Double crystal x-ray diffraction is used to evaluate the mismatch and crystal quality of the GaInAs epitaxial films. Full widths at half-maximum intensity (ω1/2) of the double crystal diffraction peak as small as 50 arc s are obtained. The average ω1/2 is less than 80 arc s for all films grown at deposition temperatures between 520 and 540 °C and with mismatch strains between -4×10-3 and +1×10-3. Standard TEM is used to image Ga0.47In0.53As on InP in cross section. No planar defects and few dislocations are present. High resolution TEM of the Ga0.47Ino.53As/InP interface shows that no strain or mismatch related defects are present for nearly lattice-matched films. Hall mobilities of 10 500 and 47 500 cm2/Vs at 300 and 77 K are measured at n=2×1015 cm-3. These values are comparable to those of good liquid phase epitaxial layers. [ABSTRACT FROM AUTHOR]
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Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP.
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Autor/in / Beteiligte Person: | Carey, Kent W. |
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Zeitschrift: | Applied Physics Letters, Jg. 46 (1985), Heft 1, S. 89-91 |
Veröffentlichung: | 1985 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.95808 |
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