The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration.
In: Applied Surface Science, Jg. 297 (2014-04-01), S. 125-129
Online
academicJournal
Zugriff:
Highlights: [•] Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. [•] Effects of Ga doping using TMGa in Ga doped ZnO were investigated. [•] Degraded properties from excessive doping were analyzed using chemical bondings. [ABSTRACT FROM AUTHOR]
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The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration.
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Autor/in / Beteiligte Person: | Jung, Hanearl ; Kim, Doyoung ; Kim, Hyungjun |
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Zeitschrift: | Applied Surface Science, Jg. 297 (2014-04-01), S. 125-129 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0169-4332 (print) |
DOI: | 10.1016/j.apsusc.2014.01.096 |
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