Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition.
In: Applied Surface Science, Jg. 295 (2014-03-15), S. 260-265
Online
academicJournal
Zugriff:
Highlights: [•] Ga-doped ZnO (GZO) was deposited by using thermal ALD and plasma-enhanced ALD. [•] Properties of GZO were investigated as a function of doping concentration. [•] TMGa was acted as a growth inhibitor below 300°C at Th-ALD. [•] The lowest resistivity can be obtained at maximum Ga solubility of ZnO. [•] Th-ALD GZO can be applicable to electrode of transparent electronics. [ABSTRACT FROM AUTHOR]
Titel: |
Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition.
|
---|---|
Autor/in / Beteiligte Person: | Nam, Taewook ; Lee, Chang Wan ; Kim, Hyun Jae ; Kim, Hyungjun |
Link: | |
Zeitschrift: | Applied Surface Science, Jg. 295 (2014-03-15), S. 260-265 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0169-4332 (print) |
DOI: | 10.1016/j.apsusc.2014.01.027 |
Schlagwort: |
|
Sonstiges: |
|