Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature.
In: Chinese Science Bulletin, Jg. 58 (2013-10-15), Heft 30, S. 3617-3623
academicJournal
Zugriff:
Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage ( I-V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes. [ABSTRACT FROM AUTHOR]
Titel: |
Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature.
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Autor/in / Beteiligte Person: | Wang, En ; Ping ; Bian, Ji ; Ming ; Qin, Fu ; Wen ; Zhang, Dong ; Liu, Yue ; Mei ; Zhao, Yue ; Duan, Zhong ; Wei ; Wang, Shuai |
Zeitschrift: | Chinese Science Bulletin, Jg. 58 (2013-10-15), Heft 30, S. 3617-3623 |
Veröffentlichung: | 2013 |
Medientyp: | academicJournal |
ISSN: | 1001-6538 (print) |
DOI: | 10.1007/s11434-013-6027-4 |
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