Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
In: Journal of Crystal Growth, 2013-04-01, S. 92-96
Online
academicJournal
Zugriff:
Abstract: Highly c-axis oriented GaN films were deposited on Cu coated glass substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). In-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to systematically analyze the influence of TMGa flux on the crystalline quality of the GaN films. GaN films with strong c-axis preferred orientation were achieved under the optimal TMGa flux of 1.4sccm. Moreover, a strong near band edge (NBE) emission peak located at 354nm was observed in the room temperature PL spectrum for the optimized GaN sample. The GaN/Cu/glass structure shows great potential for application in large area low cost GaN-based LED devices. [Copyright &y& Elsevier]
Titel: |
Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
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Autor/in / Beteiligte Person: | Liu, Yuemei ; Qin, Fuwen ; Zhang, Dong ; Bian, Jiming ; Zhao, Yue ; Wang, Enping ; Wang, Shuai ; Zhong, Miaomiao ; Ju, Zhenhe |
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Zeitschrift: | Journal of Crystal Growth, 2013-04-01, S. 92-96 |
Veröffentlichung: | 2013 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/j.jcrysgro.2013.01.033 |
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