Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium.
In: Applied Physics Letters, Jg. 44 (1984-03-01), Heft 5, S. 550-552
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Zugriff:
Gax In1-xAs lattice matched to the InP substrate (x=0.47) has been grown by organometallic vapor phase epitaxy using trimethylindium (TMIn) and trimethylgallium (TMGa) as the group III sources and AsH3 as the As source. In a simple, horizontal, atmospheric pressure reactor, the GaInAs growth proceeds without visible evidence of parasitic prereaction problems. The process yields homogeneous, reproducible GaInAs with a high growth efficiency and a solid/vapor In distribution coefficient of nearly unity. Most importantly, several layers with room-temperature electron mobilities of approximately 10 000 cm2/Vs and carrier concentrations of approximately 1015 cm-3 have been produced. The 4-K photoluminescence shows a narrow (4-5 meV) band-edge emission peak and a low-intensity band acceptor peak at ∼18 meV lower energy. Surface morphologies are routinely featureless as observed by high magnification interference contrast microscopy. [ABSTRACT FROM AUTHOR]
Titel: |
Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium.
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Autor/in / Beteiligte Person: | Kuo, C. P. ; Yuan, J. S. ; Cohen, R. M. ; Dunn, J. ; Stringfellow, G. B. |
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Zeitschrift: | Applied Physics Letters, Jg. 44 (1984-03-01), Heft 5, S. 550-552 |
Veröffentlichung: | 1984 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.94799 |
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