Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
In: Materials Research Bulletin, Jg. 46 (2011-10-01), Heft 10, S. 1582-1585
Online
academicJournal
Zugriff:
Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400°C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature. [Copyright &y& Elsevier]
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Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
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Autor/in / Beteiligte Person: | Zhang, D. ; Bian, J.M. ; Qin, F.W. ; Wang, J. ; Pan, L. ; Zhao, J.M. ; Zhao, Y. ; Bai, Y.Z. ; Du, G.T. |
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Zeitschrift: | Materials Research Bulletin, Jg. 46 (2011-10-01), Heft 10, S. 1582-1585 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0025-5408 (print) |
DOI: | 10.1016/j.materresbull.2011.06.023 |
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