Fabrication of fully epitaxial Co<subscript>2</subscript>MnSi/MgO/Co<subscript>2</subscript>MnSi magnetic tunnel junctions.
In: Journal of Applied Physics, Jg. 103 (2008-04-01), Heft 7, S. 7A919- (3S.)
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Zugriff:
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28 nm, for tMgO ranging from 1.8 to 3.0 nm. [ABSTRACT FROM AUTHOR]
Titel: |
Fabrication of fully epitaxial Co<subscript>2</subscript>MnSi/MgO/Co<subscript>2</subscript>MnSi magnetic tunnel junctions.
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Autor/in / Beteiligte Person: | Ishikawa, Takayuki ; Hakamata, Shinya ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi |
Link: | |
Zeitschrift: | Journal of Applied Physics, Jg. 103 (2008-04-01), Heft 7, S. 7A919- (3S.) |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/1.2843756 |
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