Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N/GaN heterostructures.
In: Applied Physics Letters, Jg. 91 (2007-08-13), Heft 7, S. 71920-71922
Online
academicJournal
Zugriff:
The admixture of linear and circular photogalvanic effects and (CPGEs) in AlxGa1-xN/GaN heterostructures has been investigated quantitatively by near-infrared irradiation at room temperature. The spin-based photocurrent that the authors have observed solidly indicates the sizable spin-orbital interaction of the two-dimensional electron gas in the heterostructures. Further analysis shows consistency between studies by optical and magnetic (Shubnikov de-Haas) measurements on the spin-orbital coupling effects among different AlxGa1-xN/GaN heterostructures, indicating that the CPGE measurement is a good way to investigate the spin splitting and the spin polarization in semiconductors. [ABSTRACT FROM AUTHOR]
Titel: |
Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N/GaN heterostructures.
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Autor/in / Beteiligte Person: | Tang, Y. Q. ; Shen, B. ; He, X. W. ; Han, K. ; Tang, N. ; Chen, W. H. ; Yang, Z. J. ; Zhang, G. Y. ; Chen, Y. H. ; Tang, C. G. ; Wang, Z. G. ; Cho, K. S. ; Chen, Y. F. |
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Zeitschrift: | Applied Physics Letters, Jg. 91 (2007-08-13), Heft 7, S. 71920-71922 |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.2770659 |
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