Fabrication of GaN nanotubular material using MOCVD with an aluminium oxidemembrane.

GaN nanotubular material is fabricated with an aluminium oxide membrane inMOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaNnanotubular material. An aluminium oxide membrane with ordered nanoholes is used asa template. Gallium nitride is deposited at the inner wall of the nanoholes inthe aluminium oxide template, and the nanotubular material with high aspectratio is synthesized using the precursors of TMG and ammonia gas. Optimalsynthesis conditions in MOCVD are obtained successfully for the gallium nitridenanotubular material in this research. The diameter of the GaN nanotube fabricated isapproximately 200–250 nm and the wall thickness is about 40–50 nm. GaN nanotubularmaterial consists of numerous fine GaN particulates with size range 15–30 nm.The composition of gallium nitride is confirmed to be stoichiometrically 1:1 forGa and N by EDS. XRD and TEM analyses indicate that the grains in GaNnanotubular material have a nano-crystalline structure. No blue shift is found in the PLspectrum on the GaN nanotubular material fabricated in an aluminium oxidetemplate. [ABSTRACT FROM AUTHOR]