Characterization of growth and crystallization processes in CoFeB/MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction.
In: Applied Physics Letters, Jg. 87 (2005-12-12), Heft 24, S. 242503-242505
Online
academicJournal
Zugriff:
We performed reflective high-energy electron diffraction observations to investigate the growth and crystallization processes of Co60Fe20B20/MgO/Co60Fe20B20 magnetic tunnel junction structures. A MgO layer grown on an amorphous CoFeB layer has an amorphous structure up to the MgO thickness (tMgO) of 4 monoatomic layers (ML) and begins to crystallize with (001) preferred orientation when tMgO>=5 ML. By annealing, an amorphous CoFeB layer grown on MgO(001) crystallizes in a body-centered-cubic structure with (001) orientation because MgO(001) acts as a template to crystallize CoFeB. The results give important information for understanding the mechanism of giant tunneling magnetoresistance effect in CoFeB/MgO/CoFeB MTJs. [ABSTRACT FROM AUTHOR]
Titel: |
Characterization of growth and crystallization processes in CoFeB/MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction.
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Autor/in / Beteiligte Person: | Yuasa, Shinji ; Suzuki, Yoshishige ; Katayama, Toshikazu ; Ando, Koji |
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Zeitschrift: | Applied Physics Letters, Jg. 87 (2005-12-12), Heft 24, S. 242503-242505 |
Veröffentlichung: | 2005 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.2140612 |
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