Growth and transport properties of Sb<subscript>2−</subscript> <subscript>x</subscript> V <subscript>x</subscript> Te<subscript>3</subscript> thin films on sapphire substrates
In: Journal of Crystal Growth, Jg. 283 (2005-10-01), Heft 3/4, S. 309-314
Online
academicJournal
Zugriff:
Abstract: Thin films of Sb2− x V x Te3 with , 0.15, 0.32 and 0.35 have been grown on sapphire (0001) substrates using molecular-beam epitaxy. With the increasing concentration of vanadium, the in-plane lattice constant of Sb2− x V x Te3 films decreases while the c-axis lattice constant shows a very small increase. The electrical resistivity of Sb2− x V x Te3 films decreases by an order of magnitude when V is substituted on the Sb sublattice. The Hall effect measurements show an increase in the concentration of holes as the content of vanadium increases. [Copyright &y& Elsevier]
| Titel: |
Growth and transport properties of Sb<subscript>2−</subscript> <subscript>x</subscript> V <subscript>x</subscript> Te<subscript>3</subscript> thin films on sapphire substrates
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| Autor/in / Beteiligte Person: | Chien, Yi-Jiunn ; Zhou, Zhenhua ; Uher, Ctirad |
| Link: | |
| Zeitschrift: | Journal of Crystal Growth, Jg. 283 (2005-10-01), Heft 3/4, S. 309-314 |
| Veröffentlichung: | 2005 |
| Medientyp: | academicJournal |
| ISSN: | 0022-0248 (print) |
| DOI: | 10.1016/j.jcrysgro.2005.06.046 |
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