Deep level transient spectroscopy studies on BaTiO<subscript>3</subscript> and Ba<subscript>1x</subscript>Ca<subscript>x</subscript>TiO<subscript>3</subscript> thin films deposited on Si substrates.
In: Semiconductor Science & Technology, Jg. 20 (2005-02-01), Heft 2, S. 250-255
Online
academicJournal
Zugriff:
Laser ablation grown BaTiO3 and Ba1xCaxTiO3 thin films were studied in the metalferroelectricsemiconductor configuration by the deep level transient spectroscopy (DLTS) technique. The capture cross section, bulk and interface traps were determined from the DLTS technique. The distributions of calculated interface states were mapped with the silicon energy band gap for both the thin films. The interface states of the Ba1xCaxTiO3 thin films were found to be higher than the BaTiO3 thin films. The substitution of Ca2+ into the Ba2+ sites of BaTiO3 results in a decreased lattice constant, thereby leading to shrinkage in the unit cell. This might be one of the reasons for the higher density of interface states present in Ba1xCaxTiO3, as it leads to a large number of unsaturated bonds at the interface of Si substratethin films. The calculated capture cross section of the interface traps in both the BaTiO3 and Ba1xCaxTiO3 thin films was very low in the range of 10-21 cm2. [ABSTRACT FROM AUTHOR]
Titel: |
Deep level transient spectroscopy studies on BaTiO<subscript>3</subscript> and Ba<subscript>1x</subscript>Ca<subscript>x</subscript>TiO<subscript>3</subscript> thin films deposited on Si substrates.
|
---|---|
Autor/in / Beteiligte Person: | P Victor and S B Krupanidhi |
Link: | |
Zeitschrift: | Semiconductor Science & Technology, Jg. 20 (2005-02-01), Heft 2, S. 250-255 |
Veröffentlichung: | 2005 |
Medientyp: | academicJournal |
ISSN: | 0268-1242 (print) |
DOI: | 10.1088/0268-1242/20/2/026 |
Schlagwort: |
|
Sonstiges: |
|