Study of Ga<subscript>2</subscript>O<subscript>3</subscript> Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range.
In: Technical Physics Letters, Jg. 49 (2023-12-04), S. S211- (4S.)
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Zugriff:
Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor. [ABSTRACT FROM AUTHOR]
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Study of Ga<subscript>2</subscript>O<subscript>3</subscript> Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range.
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Autor/in / Beteiligte Person: | Lundin, V. V. ; Rodin, S. N. ; Sakharov, A. V. ; Tsatsulnikov, A. F. ; Lobanova, A. V. ; Bogdanov, M. V. ; Talalaev, R. A. ; Sun, Haiding ; Long, Shibing |
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Zeitschrift: | Technical Physics Letters, Jg. 49 (2023-12-04), S. S211- (4S.) |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1063-7850 (print) |
DOI: | 10.1134/S1063785023900807 |
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