Low-loss ferroelectricity in (Bi, Sn)-modified Na<subscript>1−x</subscript>Ba<subscript>x</subscript>Nb<subscript>1−x</subscript>Ti<subscript>x</subscript>O<subscript>3</subscript> (x = 12.5%).
In: Ferroelectrics, Jg. 618 (2024), Heft 1, S. 102-109
Online
academicJournal
Zugriff:
Na0.875Ba0.125Nb0.875Ti0.125O3 (NNBT) and Na0.875Ba0.11Bi0.01Nb0.875Ti0.11Sn0.0112O3 synthesized by solid-state technique exhibit P4bm symmetry. Dielectric-relaxations for NNBT show a transition to an antiferroelectric state below 449 °C (TC) with a prominent fall in the dielectric constant and the dielectric loss, like parent NaNbO3. Below 175 °C (TF) Ba, Ti-doping induced frequency-independent dielectric peak marks the ferroelectric phase. With 1.5% Bi, Sn-doping in NNBT, the grain size and the density of the ceramic increase. Bi, Sn-doped NNBT exhibits dielectric transitions at TC and a diffused TF but with reduced conductivity. The doped NNBT system presents a high electrostrictive coefficient of ∼0.06 m4/C2. [ABSTRACT FROM AUTHOR]
Titel: |
Low-loss ferroelectricity in (Bi, Sn)-modified Na<subscript>1−x</subscript>Ba<subscript>x</subscript>Nb<subscript>1−x</subscript>Ti<subscript>x</subscript>O<subscript>3</subscript> (x = 12.5%).
|
---|---|
Autor/in / Beteiligte Person: | Sahlot, Pooja ; Kulkarni, A. R. |
Link: | |
Zeitschrift: | Ferroelectrics, Jg. 618 (2024), Heft 1, S. 102-109 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0015-0193 (print) |
DOI: | 10.1080/00150193.2023.2271319 |
Schlagwort: |
|
Sonstiges: |
|