Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (Al<subscript>x</subscript>Ga<subscript>1–x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> Films Using Trimethylgallium.
In: Physica Status Solidi - Rapid Research Letters, Jg. 17 (2023-10-01), Heft 10, S. 1-16
Online
academicJournal
Zugriff:
Growths of monoclinic (AlxGa1−x)2O3 thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3 thin films on (010), (100), and (2¯01) β‐Ga2O3 substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3 films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3 films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and (2¯01) β‐Ga2O3 substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3 films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3 films grown on (2¯01) β‐Ga2O3 show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3 grown on (100) Ga2O3 are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3 films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices. [ABSTRACT FROM AUTHOR]
Titel: |
Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (Al<subscript>x</subscript>Ga<subscript>1–x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> Films Using Trimethylgallium.
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Autor/in / Beteiligte Person: | Bhuiyan, A F M Anhar Uddin ; Meng, Lingyu ; Huang, Hsien-Lien ; Chae, Christopher ; Hwang, Jinwoo ; Zhao, Hongping |
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Zeitschrift: | Physica Status Solidi - Rapid Research Letters, Jg. 17 (2023-10-01), Heft 10, S. 1-16 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1862-6254 (print) |
DOI: | 10.1002/pssr.202300224 |
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