The role of carbon and C-H neutralization in MOCVD β-Ga<subscript>2</subscript>O<subscript>3</subscript> using TMGa as precursor.
In: Applied Physics Letters, Jg. 122 (2023-06-05), Heft 23, S. 1-6
Online
academicJournal
Zugriff:
In this Letter, the role of background carbon in metalorganic chemical vapor deposition (MOCVD) β-Ga2O3 growth using trimethylgallium (TMGa) as the Ga precursor was investigated. The quantitative C and H incorporations in MOCVD β-Ga2O3 thin films grown at different growth rates and temperatures were measured via quantitative secondary ion mass spectroscopy (SIMS). The SIMS results revealed both [C] and [H] increase as the TMGa molar flow rate/growth rate increases or growth temperature decreases. The intentional Si incorporation in MOCVD β-Ga2O3 thin films decreases as the growth rate increases or the growth temperature decreases. For films grown at relatively fast growth rates (GRs) (TMGa > 58 μmol/min, GR > 2.8 μm/h) or relatively low temperature (<950 °C), the [C] increases faster than that of the [H]. The experimental results from this study demonstrate the previously predicted theory—H can effectively passivate the compensation effect of C in n-type β-Ga2O3. The extracted net doping concentration from quantitative SIMS {[Si]-([C]-[H])} agrees well with the free carrier concentration measured from Hall measurement. The revealing of the role of C compensation in MOCVD β-Ga2O3 and the effect of H incorporation will provide guidance on designing material synthesis for targeted device applications. [ABSTRACT FROM AUTHOR]
Titel: |
The role of carbon and C-H neutralization in MOCVD β-Ga<subscript>2</subscript>O<subscript>3</subscript> using TMGa as precursor.
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Autor/in / Beteiligte Person: | Meng, Lingyu ; Bhuiyan, A F M Anhar Uddin ; Zhao, Hongping |
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Zeitschrift: | Applied Physics Letters, Jg. 122 (2023-06-05), Heft 23, S. 1-6 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/5.0153626 |
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