Ethylene for carbon doping of GaN by atmospheric pressure metal organic chemical vapor deposition.
In: Materials Letters, Jg. 345 (2023-08-15), S. N.PAG
Online
academicJournal
Zugriff:
• The carbon incorporation properties of GaN from C 2 H 4 and TMGa precursors was studied by AP-MOCVD. • V-III ratio was the main restriction factor for carbon incorporation of GaN. • GaN was kept high crystalline quality even at carbon doping concentration of 9E18/cm3. • High breakdown voltage was obtained in C 2 H 4 doped GaN buffer layer. The carbon incorporation properties of GaN from ethylene and trimethylgallium precursors was studied by atmospheric pressure metal organic chemical vapor deposition. It is found that V-III ratio was the main restriction factor for carbon incorporation. Carbon concentration could be regulated effectively one order of magnitude by tuning V-III ratio for C 2 H 4 doped GaN, and would be enhanced at relatively low V-III ratio for self-doped GaN. Low threading dislocation density and atomic flat surface of C 2 H 4 doped GaN films was kept even if carbon doping concentration of 9E18/cm3 compared with UID-GaN and a high breakdown voltage of 2278 V at leakage current of 10µA was obtained in C 2 H 4 doped GaN buffer layer. [ABSTRACT FROM AUTHOR]
Titel: |
Ethylene for carbon doping of GaN by atmospheric pressure metal organic chemical vapor deposition.
|
---|---|
Autor/in / Beteiligte Person: | Zhang, Li ; Dong, Zhongyuan ; Deng, Xuguang ; Zhou, Xin ; Xu, Kun ; Yang, Feng ; Yu, Guohao ; Zhang, Xiaodong ; Fan, Yaming ; Zeng, Zhongming ; Wei, Zhipeng ; Zhang, Baoshun |
Link: | |
Zeitschrift: | Materials Letters, Jg. 345 (2023-08-15), S. N.PAG |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0167-577X (print) |
DOI: | 10.1016/j.matlet.2023.134475 |
Schlagwort: |
|
Sonstiges: |
|