Performance analysis of SnS photodetector using strained SnO2 stacked layer: Numerical simulation and DFT calculations.
In: Microelectronic Engineering, Jg. 273 (2023-03-15), S. N.PAG
Online
academicJournal
Zugriff:
In this work, a new broadband Photodetector (PD) based on strained-SnO 2 /SnS heterostructure combined with back grooves aspect is proposed. First-principles calculations are carried out to assess the influence of volume reduction using compressive stress on the electronic and optical properties of SnO 2 wide band gap material. The obtained results demonstrate the potential of SnO 2 under biaxial strain as a junction partner of SnS material, showing a lower band gap of 3.06 eV allowing a favorable band offset with SnS active layer. Moreover, numerical models based on Finite Difference Time Domain (FDTD) technique are developed to analyze the optical performances of strained-SnO 2 /SnS structure including periodic back grooves at the SnS/glass interface. It is revealed that the proposed device based on combined strained-SnO 2 /SnS heterostructure and back grooves approach offers the possibility for bridging the gap between extended absorption cutoff wavelength and improved photo-induced carrier extraction capability. The device shows a high I ON /I OFF ratio of 78 dB and an enhanced responsivity under UV, visible and NIR lights (171 mA/W at 365 nm, 67 mA/W at 550 nm and 93 mA/W at 850 nm). Therefore, the investigated PD based on strained SnO 2 /SnS heterostructure and optimized back grooves morphology can offer multiple sensing purposes with low power consumption and low elaboration cost, making it highly appropriate for the emerging optoelectronic applications. [Display omitted] • a new broadband Photodetector based on strained-SnO 2 /SnS heterostructure is proposed. • Optoelectronic properties of strained-SnO 2 are calculated using DFT computations. • The proposed heterostructure exhibits strong and extended absorbance capabilities. • The device shows a high and broadband photoresponse under UV, visible and NIR lights. [ABSTRACT FROM AUTHOR]
Titel: |
Performance analysis of SnS photodetector using strained SnO2 stacked layer: Numerical simulation and DFT calculations.
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Autor/in / Beteiligte Person: | Djeffal, F. ; Ferhati, H. ; Benyahia, A. ; Dibi, Z. |
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Zeitschrift: | Microelectronic Engineering, Jg. 273 (2023-03-15), S. N.PAG |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0167-9317 (print) |
DOI: | 10.1016/j.mee.2023.111961 |
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