Passivation of silicon substrate using two-step grown ternary aluminium doped zirconium oxide.
In: Applied Surface Science, Jg. 493 (2019-11-01), S. 411-422
Online
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Zugriff:
Ternary based aluminium doped zirconium oxide (Al x Zr y O z) was grown on silicon (Si) substrate after post-sputter oxidation of the Al Zr film at different temperatures (400–1000 °C). Mixed phases (monoclinic + tetragonal) of Al x Zr y O z films were formed in all of the investigated films, accompanied with generation of oxygen vacancies (V o). The presence of V o favoured the hopping of oxygen molecules for oxidation to take place, leading to the formation of Al-Zr-Si-O interfacial layer (IL). The saturation of lattice with oxygen at high temperature (800 and 1000 °C) encouraged the trapping of additional oxygen as interstitials at the Al O network. Owing to the competition of both V o and interstitials, microcracking was found on the film surface. Subsequent investigation was focused on the film obtained at 600 °C to study frequency dependent characteristics (dielectric constant, dielectric loss, interface state density, and series resistance) through capacitance-voltage and conductance-voltage measurements at different frequencies. • Two-step growth route to produce ternary aluminium doped zirconium oxide films • Oxygen vacancies and interstitials were generated in the films. • Frequency dependent interface state density and series resistance happened. • Dielectric constant, dielectric loss, and loss tangent change with frequency. [ABSTRACT FROM AUTHOR]
Titel: |
Passivation of silicon substrate using two-step grown ternary aluminium doped zirconium oxide.
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Autor/in / Beteiligte Person: | Quah, Hock Jin ; Hassan, Zainuriah ; Lim, Way Foong |
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Zeitschrift: | Applied Surface Science, Jg. 493 (2019-11-01), S. 411-422 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0169-4332 (print) |
DOI: | 10.1016/j.apsusc.2019.07.023 |
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