The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge.
In: Superlattices & Microstructures, Jg. 128 (2019-04-01), S. 1-8
Online
academicJournal
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Abstract We report the effects of AsH 3 (arsine) on morphological, structural, optical and crystalline quality of MOVPE (metal organic vapor phase epitaxy) grown GaAs/Ge heterostructures. AsH 3 pre-flow supplied on Ge substrate to have As atoms as a first atomic layer on the surface of Ge substrate. Additionally, the V/III ratio effects of LT-GaAs buffer layer, grown on arsenized Ge substrate, have been analyzed to have reduced APBs (anti-phase boundaries) in the interface between epilayer and Ge substrate. It has been considered that the optimal AsH 3 pre-flow duration and V/III ratio of GaAs buffer layer extremely influence the effects of APBs even we have used miss-cut Ge substrate and grown by two-step growth technique to obtain double atomic step. It is shown that without AsH 3 pre-flow the surface of GaAs epilayer becomes rougher while it is optically smooth under the longer AsH 3 pre-flow. On the other hand, even the surface situation does not change with longer AsH 3 pre-flow the structural, optical and crystalline qualities become worse because of the possible presence vacancies of created during the growth. Similar behavior has been observed for the V/III effects of GaAs buffer layer and it has resulted in low full width at half maximum of high-resolution X-ray diffraction and high photoluminescence peak intensity for the optimal V/III ratio. Highligths • High quality GaAs epilayers were grown by MOVPE on miscut Ge substrates. • AsH 3 pre-flow supplied on Ge to have As atoms as a first atomic layer on the surface and effects are investigated. • V/III ratio effects of GaAs buffer layer on heterostructure properties have been analyzed under the fixed flow of TMGa. [ABSTRACT FROM AUTHOR]
Titel: |
The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge.
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Autor/in / Beteiligte Person: | Demir, Ilkay |
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Zeitschrift: | Superlattices & Microstructures, Jg. 128 (2019-04-01), S. 1-8 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0749-6036 (print) |
DOI: | 10.1016/j.spmi.2019.01.007 |
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