Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD.
In: Infrared Physics & Technology, Jg. 95 (2018-12-01), S. 199-202
Online
academicJournal
Zugriff:
Highlights • Growth details of InGaAs/GaAsSb T2SL using MOCVD were described. • Type II transition was observed using photoluminescence measurements. • We have shown that the T2SL can be used as an absorption layer for eSWIR Photodetector. Abstract A type II superlattice InGaAs/GaAsSb based on InP for extended short wave infrared photodetector was grown using metalorganic chemical vapor deposition reactor. The layers were characterized using photoluminescence and X-ray diffraction and a functional photodetector was fabricated. TMIn, TMGa, TMSb and TBAs were used as metalorganic precursors and DEZn was the P dopant source. The growth was carried out at 600 °C and 400 Torr with V/III ratio of 49 and 2.9 during the InGaAs and the GaAsSb growth respectively. [ABSTRACT FROM AUTHOR]
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Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD.
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Autor/in / Beteiligte Person: | Elias, D.C. ; Shafir, I. ; Meir, T. ; Sinai, O. ; Memram, D. ; Shusterman, S.S. ; Katz, M. |
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Zeitschrift: | Infrared Physics & Technology, Jg. 95 (2018-12-01), S. 199-202 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 1350-4495 (print) |
DOI: | 10.1016/j.infrared.2018.10.032 |
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