Effect of growth conditions on the Al composition and optical properties of AlxGa1 −xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy.
In: Thin Solid Films, Jg. 630 (2017-05-30), S. 2-6
Online
academicJournal
Zugriff:
The effect of growth conditions on the Al composition and optical properties of Al x Ga 1 − x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the Al x Ga 1 − x N layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the Al x Ga 1 − x N layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. [ABSTRACT FROM AUTHOR]
| Titel: |
Effect of growth conditions on the Al composition and optical properties of AlxGa1 −xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy.
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| Autor/in / Beteiligte Person: | Soltani, S. ; Bouzidi, M. ; Chine, Z. ; Touré, A. ; Halidou, I. ; Jani, B. El ; Shakfa, M.K. |
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| Zeitschrift: | Thin Solid Films, Jg. 630 (2017-05-30), S. 2-6 |
| Veröffentlichung: | 2017 |
| Medientyp: | academicJournal |
| ISSN: | 0040-6090 (print) |
| DOI: | 10.1016/j.tsf.2017.02.039 |
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