Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer.
In: Journal of Crystal Growth, Jg. 467 (2017-06-01), S. 1-5
Online
academicJournal
Zugriff:
Growth conditions are used to control the residual carbon impurity incorporation in p ++ -GaN layers. Specific contact resistance (ρ c ) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρ c indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρ c is improved to 6.80 × 10 −5 Ω × cm 2 with a carbon concentration of 8.3 × 10 17 cm −3 in p ++ -GaN layer, when the growth temperature, pressure and flow rate of CP 2 Mg and TMGa are 940 °C, 100 Torr, 3 μmol/min and 28 μmol/min, respectively. [ABSTRACT FROM AUTHOR]
Titel: |
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer.
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Autor/in / Beteiligte Person: | Liang, Feng ; Zhao, Degang ; Jiang, Desheng ; Liu, Zongshun ; Zhu, Jianjun ; Chen, Ping ; Yang, Jing ; Liu, Wei ; Li, Xiang ; Liu, Shuangtao ; Xing, Yao ; Zhang, Liqun ; Yang, Hui ; Long, Heng ; Li, Mo |
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Zeitschrift: | Journal of Crystal Growth, Jg. 467 (2017-06-01), S. 1-5 |
Veröffentlichung: | 2017 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/j.jcrysgro.2017.03.009 |
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