Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers.
In: IEEE Transactions on Electron Devices, Jg. 63 (2016-12-01), Heft 12, S. 5030-5035
Online
academicJournal
Zugriff:
The effect of a triple metal-gate (TMG) on the performance and on the ambipolar current in a TMG vertical tunnel field-effect transistor with triple metal-gate (TMG-TFET) is investigated using technology computer-aided design simulation. The TMG-TFET is designed to tackle the performance as well as the ambipolar current, simultaneously, by modulating the TMG parameters—the work function of the TMG and/or the length of each MG—that have critical impacts on the energy-band diagrams of the channel region. The tempered on-/off-current ratio of 10^\mathrm 8 and the steep average subthreshold slope of 43.5 mV/decade at a power supply voltage of 0.5 V are ascribed to the formation of an energy barrier in the channel by the optimal device parameters. It is found that two main flaws in a conventional (single-material gate) TFET, which are the degraded on-state current and the ambipolar current, can be successfully controlled by adjusting the TMG structure. [ABSTRACT FROM PUBLISHER]
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Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers.
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Autor/in / Beteiligte Person: | Ko, Eunah ; Lee, Hyunjae ; Shin, Changhwan ; Park, Jung-Dong |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 63 (2016-12-01), Heft 12, S. 5030-5035 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2016.2619372 |
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