A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET.
In: Chinese Physics B, Jg. 25 (2016-10-01), Heft 10, S. 1-1
Online
academicJournal
Zugriff:
In the present work, a two-dimensional (2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS™ device simulator to affirm and formalize the proposed device structure. [ABSTRACT FROM AUTHOR]
| Titel: |
A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET.
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| Autor/in / Beteiligte Person: | Tripathi, Shweta |
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| Zeitschrift: | Chinese Physics B, Jg. 25 (2016-10-01), Heft 10, S. 1-1 |
| Veröffentlichung: | 2016 |
| Medientyp: | academicJournal |
| ISSN: | 1674-1056 (print) |
| DOI: | 10.1088/1674-1056/25/10/108503 |
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