Growth of network structured carbon-doped GaN (GaN:C) nanowires using a modified metal-organic chemical vapor deposition.
In: Vacuum, Jg. 123 (2016), S. 82-85
Online
academicJournal
Zugriff:
A network structured carbon-doped GaN (GaN:C) nanowires (NWs) was formed by a modified metal-organic chemical vapor deposition (MOCVD) technique using Ga(CH 3 ) 3 , HCl and NH 3 as precursors. The GaN:C NWs were acquired from a non-stoichiometric ratio of Ga(CH 3 ) 3 and HCl, and the key process is believed to be the formation of polymerized GaCl x containing methyl groups. As-formed GaN:C NWs exhibited a hexagonal Wurtzite structure. The Ga to N elemental ratio was approximately 1:1, and the GaN:C NWs contained carbon with concentration of ∼5%. The GaN:C NWs showed the blue luminescence (BL) at 2.69 eV, which was conjectured to originate from the C N + – C N 0 transitions. The method developed in this study could produce a network structure of GaN:C NWs without using catalysts. Moreover, carbon doping was found to be one of the candidates to change the optoelectronic properties of GaN. [ABSTRACT FROM AUTHOR]
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Growth of network structured carbon-doped GaN (GaN:C) nanowires using a modified metal-organic chemical vapor deposition.
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Autor/in / Beteiligte Person: | Kim, Hong Tak ; Kim, Chan-Duk ; Min, Bong-Ki ; Park, Chinho |
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Zeitschrift: | Vacuum, Jg. 123 (2016), S. 82-85 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0042-207X (print) |
DOI: | 10.1016/j.vacuum.2015.10.017 |
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