CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa.
In: Journal of Crystal Growth, Jg. 434 (2016-01-15), S. 116-122
Online
academicJournal
Zugriff:
In-situ etching of GaAs with CBr 4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented. [ABSTRACT FROM AUTHOR]
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CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa.
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Autor/in / Beteiligte Person: | Della Casa, Pietro ; Maaßdorf, Andre ; Zeimer, Ute ; Weyers, Markus |
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Zeitschrift: | Journal of Crystal Growth, Jg. 434 (2016-01-15), S. 116-122 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/j.jcrysgro.2015.11.002 |
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