Research on the high indium content InGaAs multiple quantum wells wafers for λ > 1.55 μm laser diodes.
In: Journal of Alloys & Compounds, Jg. 631 (2015-05-15), S. 283-287
Online
academicJournal
Zugriff:
The effects of TMIn flow rate and AsH 3 flow rate on the photoluminescence spectra of the high indium content InGaAs multiple quantum wells for λ > 1.55 μm laser diodes have been investigated both experimentally and theoretically. The wavelength peak red-shifted about 4.8 nm for increasing 1 sccm H 2 flow rate through TMIn under a AsH 3 flow rate of 150 sccm, while the wavelength shift increases to 6.5 nm at a higher AsH 3 flow rate of 300 sccm. Results show that more AsH 3 flow rate will promote much TMGa pyrolysis than TMIn in the high indium content InGaAs growth. Considering the influence of growth parameters, the longest wavelength of 1.889 μm among the InGaAs/InGaAsP strained MQWs samples was obtained with high crystal quality. [ABSTRACT FROM AUTHOR]
Titel: |
Research on the high indium content InGaAs multiple quantum wells wafers for λ > 1.55 μm laser diodes.
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Autor/in / Beteiligte Person: | Lin, Tao ; Sun, Hang ; Zhang, Haoqing ; Wang, Yonggang ; Lin, Nan ; Ma, Xiaoyu |
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Zeitschrift: | Journal of Alloys & Compounds, Jg. 631 (2015-05-15), S. 283-287 |
Veröffentlichung: | 2015 |
Medientyp: | academicJournal |
ISSN: | 0925-8388 (print) |
DOI: | 10.1016/j.jallcom.2015.01.120 |
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