Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition.
In: Applied Physics Letters, Jg. 83 (2003-07-07), Heft 1, S. 9-11
Online
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Zugriff:
Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on GaN/Al[SUB2]O[SUB3] substrates. Trimethylgallium (TMGa), ammonia (NH[SUB3]), and europium 2,2,4,4-tetramethyl-3,5-heptanedionate were used as sources for Ga, N, and Eu dopant, respectively. The influence of the V/III ratio during growth on the photoluminescence (PL) intensity has been studied using a fixed TMGa flow rate of 92 μmol/min and varying the NH[SUB3] flow rate. The film growth rate (∼2 μm/h) is nearly constant with V/III ratio over the range from ∼30 to ∼1000. The Eu incorporation in GaN films was found to decrease with increasing V/III ratio. The Eu PL intensity (normalized to the Eu concentration) exhibited a maximum at a V/III ratio of ∼100. [ABSTRACT FROM AUTHOR]
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Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition.
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Autor/in / Beteiligte Person: | Pan, M. ; Steckl, A. J. |
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Zeitschrift: | Applied Physics Letters, Jg. 83 (2003-07-07), Heft 1, S. 9-11 |
Veröffentlichung: | 2003 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.1590738 |
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