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Thema
- epitaxial growth 2 Treffer
- epitaxial layers 2 Treffer
- hydrogen 2 Treffer
- indium phosphide 2 Treffer
- ash 1 Treffer
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15 weitere Werte:
- chemicals 1 Treffer
- fabrication 1 Treffer
- indium gallium arsenide 1 Treffer
- inductors 1 Treffer
- mocvd 1 Treffer
- optical buffering 1 Treffer
- organic materials 1 Treffer
- personal communication networks 1 Treffer
- photonic crystals 1 Treffer
- silicon compounds 1 Treffer
- stability 1 Treffer
- steel 1 Treffer
- substrates 1 Treffer
- temperature 1 Treffer
- temperature distribution 1 Treffer
Publikation
- [proceedings 1991] third international conference indium phosphide and related materials, indium phosphide and related materials, 1991., third international conference. 1 Treffer
- 2000 ieee international symposium on compound semiconductors. proceedings of the ieee twenty-seventh international symposium on compound semiconductors (cat. no.00th8498), compound semiconductors, 2000 ieee international symposium on, compound semiconductors 1 Treffer
- seventh international conference on indium phosphide and related materials, indium phosphide and related materials, 1995. conference proceedings., seventh international conference on, indium phosphide and related materials 1 Treffer
Inhaltsanbieter
3 Treffer
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In: Seventh International Conference on Indium Phosphide and Related Materials, 1995, S. 144-147Online KonferenzZugriff:
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In: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498), 2000, S. 191-196Online KonferenzZugriff:
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In: [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, S. 76-79Online KonferenzZugriff: